gs8050xu vishay semiconductors formerly general semiconductor document number 88193 www.vishay.com 09-may-02 1 new product small signal transistors (npn) features ? npn silicon epitaxial planar transistors for amplifier applications. especially suitable for low power output stages such as portable radios in class-b push-pull operation. ?complementary to gs8550xu ?the ? in the part number can be b, c or d, depending on the current gain. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk - 5k per container, 20k per box e7/4k per ammo mag., 20k per box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified parameter symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6v collector current i c 800 ma power dissipation at t amb = 25 cp tot 625 (1) mw thermal resistance junction to ambient air r ja 200 (1) c/w junction temperature t j 150 c storage temperature range t s 55 to +150 c notes: (1) valid provided that leads are kept at ambient temperature at a distance of 2mm from case 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view dimensions in inches and (millimeters) to-226aa (to-92)
gs8050xu vishay semiconductors formerly general semiconductor www.vishay.com document number 88193 2 09-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit v ce = 1v, i c = 5ma 45 135 current gain group b v ce = 1v, i c = 100ma 85 160 dc current gain c h fe 120 200 d 160 300 v ce = 1v, i c = 800ma 50 collector-emitter breakdown voltage v (br)ceo i c = 2ma, i b = 0 25 v collector-base breakdown voltage v (br)cbo i c = 100a, i e = 0 40 v emitter-base breakdown voltage v (br)ebo i e = 100a, i c = 0 6 v collector cut-off current i cbo v cb = 35v, i e = 0 100 na emitter cut-off current i ebo v eb = 6v, i c = 0 100 na collector-emitter saturation voltage v ce(sat) i c = 800ma, i b = 80ma 0.51 v base-emitter saturation voltage v be(sat) i c = 800ma, i b = 80ma 1.2 v base-emitter on voltage v be(on) v ce = 1v, i c = 10ma 0.66 1.0 v output capacitance c ob v cb = 10v, i e = 0, = 1mhz 9 pf gain-bandwidth product t v ce = 10v, i c = 50ma 100 mhz
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